AP9926GEO-HF mosfet equivalent, dual n-channel enhancement mode power mosfet.
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.
G1 S1 S1 D1
BVDSS RDS(ON) ID
D1 G1 G2
S1
20V 28mΩ 4.6A
D2
S2
Absolute Ma.
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